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  • 理学院数理讲坛(2018年第34讲)
  • 发布时间:2018年08月20日 14:36 作者: 点击:[]
  • 理学院数理讲坛2018年第34讲)

    报告题目:金属氧化物薄膜晶体管(IGZO TFT)及稳定性研究与讨论

    报告人: 刘文军  青年研究员

      位: 复旦大学

    报告时间:2018822日(星期三)9:00-10:00

    报告地点:理学院116

    报告摘要:

    Thin-film transistors (TFTs) are core building blocks to control the millions of sub-pixels in the backplanes of liquid crystal displays (LCDs) and active-matrix organic light-emitting diode (OLED) displays. The past several years have witnessed impressive growth in TFT technologies, driven by an insatiable demand for new generation ultra-high-definition (UHD) displays with increasing panel size and the newly-emerging flexible displays with revolutionary design.1-4 Nevertheless, amorphous silicon TFTs have reached technical limits, owing to their low electrical efficiency. Metal oxides are versatile materials with controllable electronic functionality ranging from conducting, semiconducting to insulating. Oxide TFTs have thus attracted great interest as an alternative of LTPS to drive the next generation UHD displays from small-sized smartphones to large panel TV’s. However, the device performance of existing IGZO TFTs is modest and often exhibits trade-offs between mobility and other parameters; thus, the current IGZO TFTs can’t meet the high-pixel-density and low-power consumption requirements for the battery-powered mobile devices like smartphones. In this presentation, the fabrication process and certain key reliability issues of the novel metal oxide thin film transistor will be discussed in detail.

     

    报告人简介:

    刘文军青年研究员,现任职于复旦大学微电子学院,日本学术振兴会(JSPS)基金获得者、上海“浦江人才计划 IEEE/日本应用物理协会会员。自20094月至20157月先后在新加坡南洋理工大学,新加坡制造技术研究院和日本东京大学主要从事,主要研究方向微纳米电子器件与工艺、器件失效分析、新型半导体材料光电子器件等研究。20157月,作为引进人才加入复旦大学微电子学院,任青年研究员。目前,已在国内外期刊IEDM(3)EDL/T-ED20篇)等发表学术论文90余篇,其中SCI检索>50篇,EI检索>35篇,引用>500次,并为IEEE T-ED, Nanoscale research letters, Solid-state electronics, Journal of the electrochemical society等国际期刊审稿。

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